METHOD AND DEVICE FOR DEPOSITION REACTORS Russian patent published in 2013 - IPC C30B25/14 C23C16/00 

Abstract RU 2502834 C2

FIELD: process engineering.

SUBSTANCE: precursor vapours 101 are fed through reaction chamber cover in feed line 141, 142 into deposition reactor reaction chamber 110. Vertical flow of precursor vapours is set and forced vertically from top to bottom in spacing between vertical substrates 170. Material is deposited on surfaces of substrates 170 mounted vertically.

EFFECT: higher efficiency, reduced mean time interval between servicing jobs.

13 cl, 15 dwg

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RU 2 502 834 C2

Authors

Lindfors Sven

Dates

2013-12-27Published

2009-05-25Filed