FIELD: nuclear physics.
SUBSTANCE: invention relates to a method for atomic layer deposition of a film on a substrate and an apparatus for said deposition. Method comprises providing a unit of a reaction chamber of reactor atomic layer deposition to process batch of substrates transported on a trolley, by atomic layer deposition, loading trolley that moves batch of substrates prior to processing in reaction chamber module on path different from path on which batch of substrates is discharged after processing, dividing batch of substrates into sub-batches of substrates and simultaneous processing of all sub-batches in reaction chamber module. Each sub-batch is provided with its own inlet hole for gas flow and own outlet for gas flow. Said device comprises a reaction chamber of reactor atomic layer deposition module adapted to process batch of substrates by atomic layer deposition. Said reaction chamber module is configured to split batch of substrates on into sub-batches of substrates. Each sub-batch is provided with its own inlet hole for gas flow and own outlet for gas flow and device for loading and unloading to loading batch of substrates before processing in reaction chamber module on path, different from path along which batch of substrates is unloaded after processing.
EFFECT: higher efficiency of atomic layer deposition.
18 cl, 14 dwg
