FIELD: physics.
SUBSTANCE: first column of the memory elements lined up along the first direction differs from the adjacent second column of memory elements lined up along the first direction in the positions of the memory elements in the first direction.
EFFECT: according to one embodiment, the magnetoresistive memory device includes a substrate having a first surface that includes a first direction; and memory elements having a switchable resistance.
35 cl, 80 dwg
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