FIELD: technological processes.
SUBSTANCE: invention relates to the technology of epitaxy of doped germanium layers based on the combination in a single vacuum chamber of simultaneous precipitation of germanium from germanium and the sublimation of germanium with a doping element from the surface of a source of doped germanium, heated by an electric current, and can be used for the production of semiconductor structures. To achieve this technical result, a method is proposed for epitaxial growing of doped germanium layers by forming in a vacuum chamber a common atomic flux directed to the substrate, formed from germanium, recovered from the gas phase at high temperature, and an alloying element simultaneously entering the formation zone of said common atomic stream from an autonomous source, characterized in that growing is carried out by forming, at low vacuum, a common atomic flux directed to the heated substrate, formed from germanium, recovered from the germanium in the presence of a heating element, made of refractory metal of tantalum type, resistively heated at the temperature of said element 1,300–1,550 °C, and germanium with a doping element, evaporated from the surface of the sublimation plate, resistively heated at a temperature of said surface of 860–900 °C, located near with said heating element and made of germanium containing a doping element having a higher than germanium sublimation rate.
EFFECT: stable provision of specified degrees of doping in the absence of growth defects in a wide range of degrees of doping of epitaxially grown germanium layers.
3 cl, 1 dwg, 2 tbl
