METHOD FOR OBTAINING A RESISTIVE MASK ON A SEMICONDUCTOR SUBSTRATE FOR THE FORMATION OF MICRO- AND NANOSTRUCTURES Russian patent published in 2021 - IPC H01L21/27 B82Y10/00 

FIELD: nanotechnology and electronic engineering.

SUBSTANCE: invention relates to the field of nanotechnology and electronic engineering, in particular to methods of obtaining a resistive mask on a semiconductor substrate for the formation of micro- and nanostructures, and can be used to manufacture devices for processing, transmitting and storing information. The mask is suitable for the manufacture of various devices for processing, transmitting and storing information. The method includes: creating a layer of electronic resists on a semiconductor substrate, formed by sequentially conducting cycles of deposition of electronic resists of different types with subsequent drying, exposing the layer of electronic resists by electron lithography, creating a layer of positive photoresist followed by drying it, exposing the layer of photoresist through a template using photolithography, sequential development of photo and electronic resists. The novelty of the method is determined by the order of carrying out technological operations and the use of electronic resists of different contrast, which leads to the formation of an overhanging resistive mask that combines micro- and nanostructures.

EFFECT: method is aimed at solving the problem of creating a universal resistive mask on a semiconductor substrate for the formation of both micro- and nanostructures with specified and reproducible characteristics.

3 cl, 2 dwg