FIELD TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM Russian patent published in 2017 - IPC H01L29/786 G02F1/1368 

FIELD: electricity.

SUBSTANCE: field effect transistor includes a base, a passivation layer, gate insulation layer formed therebetween, a source electrode and a drain electrode which are formed in contact with the gate insulation layer, a semiconductor layer which is formed between at least the source electrode and the drain electrode and it is in contact with the gate insulation layer, the source electrode and the drain electrode, and a gate electrode which is in contact with the gate insulation layer and facing the semiconductor layer and through the gate insulation layer, wherein the passivation layer comprises of the first passivation layer which includes the first composite metal oxide containing Si and alkaline earth metal, and the second passivation layer which is formed in contact with the first passivation layer and contains the second composite metal oxide comprising of alkaline earth metal and rare earth element.

EFFECT: production of a highly reliable field transistor.

8 cl, 15 dwg