FIELD-EFFECT TRANSISTOR, METHOD OF ITS MANUFACTURING, DISPLAY ELEMENT, DISPLAY DEVICE AND SYSTEM Russian patent published in 2019 - IPC H01L29/78 H01L21/336 G02F1/1368 

FIELD: electrical engineering.

SUBSTANCE: manufacturing method of the field-effect transistor includes an insulating layer of the gate and an electrode, which includes the first electroconductive film and the second electroconductive film, successively layered on the predefined surface of the insulating layer of the gate. Method includes steps of forming an oxide film, comprising an element A, which is an alkali-earth metal, and an element B, which is at least one element of Ga, Sc, Y and lanthanide, as insulating layer of gate valve; forming a first electroconductive film which is soluble in an organic alkaline solution on an oxide film; forming a second electroconductive film on a first electroconductive film; etching the second electroconductive film using an etching solution having a higher etching rate for the second electroconductive film compared to the etching rate for the first electroconductive film; and etching the first electroconductive film using an organic alkaline solution using a second electroconductive film as a mask.

EFFECT: invention allows to exclude damage of insulating layer of the gate.

21 cl, 29 dwg, 5 tbl