METHOD OF MAKING AIR BRIDGES AS INTERELECTRODE CONNECTIONS OF INTEGRATED CIRCUITS Russian patent published in 2019 - IPC H01L21/306 

Abstract RU 2685082 C1

FIELD: electrical engineering; technological processes.

SUBSTANCE: invention can be used for making air bridges. Method of making aerial bridges as interelectrode connections of integrated circuits comprises steps of applying and forming a photoresist for forming a supporting layer, application and formation of photoresist second layer for formation of aerial bridge jumper area, application of metal layer of bridge, removal of both layers of photoresist, then by method of photolithography from metal film (TiAuPd, Cu, etc.) on substrate contact pads and connecting conductors are formed, by photolithography from photoresist, a supporting polymer layer is formed in the area of the future bridge lumen, by heating the strip of the supporting resist above the spreading temperature, formation of the profile of the dome-shaped supporting layer is achieved, applying next layer of photoresist and forming open areas for metallization of future bridge, sputtering bridge film from suitable material, compatible with wiring material, for example TiAuPd, which is characterized by good adhesion, high electroconductivity and sufficient rigidity, placing the substrate in the brewer for fast removal of metal over the resist by explosion (lift-off), as well as slow dissolution of the supporting layer under the bridge.

EFFECT: possibility of increasing reproducibility, reducing labor intensity and time of fabrication of jumpers in the form of air bridges, reducing resistance, inductance and capacitance of such bridges, reducing the number of process operations.

6 cl, 2 dwg

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RU 2 685 082 C1

Authors

Tarasov Mikhail Aleksandrovich

Chekushkin Artem Mikhajlovich

Yusupov Renat Albertovich

Dates

2019-04-16Published

2018-06-19Filed