METHOD FOR PRODUCING A HIGH-TEMPERATURE SUPERCONDUCTING LAYER ON A SUBSTRATE Russian patent published in 2023 - IPC C23C14/08 C23C14/18 C23C14/28 C23C14/50 

FIELD: single-crystal production.

SUBSTANCE: method for producing high-temperature superconducting layers. The invention relates to a method for producing a high-temperature superconducting YBa₂Cu₃O₇ single-crystal layer on a single-crystal sapphire substrate with orientation 10^-12. This substrate is placed in a metal holder with the possibility of positioning the deposition surface of this substrate parallel to the direction of propagation of the erosion torch and with the possibility of sliding the torch along this deposition surface. The metal holder is made enclosing this substrate with fixation along the perimeter and with petals for trapping the charge of light components - electrons with the possibility of their subsequent transport from the surface of the petals to the indicated surface of deposition of this substrate and recombination with positively charged heavy components - ions. Pulsed laser sputtering of the YBa₂Cu₃O₇ target is carried out and a layer of YBa₂Cu₃O₇ superconducting material is deposited from an erosion torch onto a heated to a temperature of 750 to 850°C of this substrate in a deposition chamber in an oxygen atmosphere. The final annealing is carried out in an oxygen atmosphere for 20 to 50 minutes at a temperature of 700 to 900°C and oxygen pressure from 0.9·10⁵ to 1.2·10⁵ Pa.

EFFECT: formation of a high-quality single-crystal layer on an orienting substrate with a low value of the dielectric loss tangent is provided.

6 cl, 4 dwg, 1 tbl, 4 ex