PERIPHERY OF SEMICONDUCTOR DEVICES WITH ENHANCED RESISTANCE TO IONIZING RADIATION Russian patent published in 2017 - IPC H01L29/02 

FIELD: physics.

SUBSTANCE: groove with the width of 2 to 6 microns and the depth not less the epitaxial layer thickness, the walls and the bottom of which are covered with the thermal silicon oxide layer with the thickness of 0.5 to 2 microns, is used as the periphery in the power semiconductor devices with the enhanced resistance to ionizing radiation, produced on the epitaxial silicon with the vertical movement of the current carriers and comprising an epitaxial layer, an active area and a periphery, and the remainder of the groove is filled with a protective filler to increase the resistance to ionizing radiation. As a result of this semiconductor device periphery construction, ionizing radiation, falling to the periphery and beyond it at the right angle, does not change the electrical properties of the semiconductor device. Radiation, directed at the angle toward the semiconductor device and falling beyond the groove, is significantly attenuated or reflected thereby.

EFFECT: invention provides the improved resistance of semiconductor devices to ionizing radiation.

6 cl, 1 dwg