MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Russian patent published in 2014 - IPC H01L21/336 

FIELD: electricity.

SUBSTANCE: in the manufacturing method for a semiconductor device at semiconductor substrate of the first type of conductivity gate dielectric, gate electrode and interlayer isolation over the gate electrode are made, then in windows of the gate electrode by ion-implantation method and thermal diffusion method channel area and source area are made with the second and first type of conductivity respectively, contacts of the metal source are opened with source and channel diffusion areas located in the middle of the gate electrode windows in the layer of silicone at the depth exceeding depth of the source areas, and contacts of the metal gate electrode are opened through interlayer dielectric to polysilicon gate electrode using the single photoresist mask in the single plasmachemical process of silicone oxide and silicone etching by selection of etching rate for oxide over the gate and etching rate for silicone. The ration of vertical etching rate of silicone oxide to horizontal etching rate is not less than 3.

EFFECT: improving the degree of integration due to reduction lateral oxide overetching in contacts.

2 cl, 1 dwg