FIELD: optoelectronics.
SUBSTANCE: invention relates to optoelectronics and can be used in making radiation-resistant optoelectronic devices. Crystals of radiation source are made based on double heteroepitaxial structures of gallium arsenide - aluminium, crystals of radiation detector are made based on structures "silicon on sapphire", and as immersion optical medium optically transparent compound is used, wherein source and receiver of optical radiation are matched by parameters by selection of design of crystals, selecting working wavelength so that source has maximum power of optical radiation, and receiver - maximum value of current sensitivity, in addition, crystals of source and receiver of radiation are mounted in housing one above another with gap comparable to thickness of crystals.
EFFECT: design of diode optoelectronic couples with maximum levels of resistance to gamma-neutron radiation exposure, which meet requirements for radiation-resistant devices of control and communication systems.
3 cl, 5 dwg
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