FIELD: instrument engineering.
SUBSTANCE: invention can be used for recording ultraviolet radiation. Essence of invention consists in that method of making photodiode sensitive element for recording ultraviolet radiation involves sputtering a thin zinc oxide film between two electrodes, according to the invention, a thin aluminum film with a chromium sublayer with total thickness of 550 nm is deposited on the KU-1 glass substrate with thickness of 1.5 mm, then, by contact photolithography on the surface of the film, interdigital electrodes are formed with a distance between electrodes of 5 mcm, on the electrodes with the help of the magnetron spray system with the additional magnetic system with reversed polarity of the magnets the zinc oxide film is deposited with thickness of 600 nm, after that the element is annealed in the atmosphere at temperature of 250 °C for 120 minutes.
EFFECT: possibility of increasing integral sensitivity of a photodiode sensitive element in the wavelength range λ=200–400 nm.
1 cl, 2 dwg
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Authors
Dates
2019-06-03—Published
2018-10-25—Filed