SEMICONDUCTOR STRUCTURE AND METHOD OF ITS MANUFACTURING Russian patent published in 2024 - IPC H10B12/10 

FIELD: elements of electrical equipment.

SUBSTANCE: method of making a semiconductor structure includes: providing a base; formation of bit lines on the base and formation of semiconductor channels on surfaces of the bit lines remote from the base, so that the semiconductor channel includes a first doping region, a channel region and a second doping region arranged in series; forming a first dielectric layer so that the first dielectric layer surrounds the side walls of the semiconductor channels, and a first gap is provided between portions of the first dielectric layer located on the side walls of adjacent semiconductor channels on the same bit line; formation of the second dielectric layer so that the second dielectric layer fills the first gaps, wherein the material of the second dielectric layer is different from the material of the first dielectric layer; removing a portion of the first dielectric layer to open the side walls of the channel regions; forming an insulating layer such that it covers at least the surfaces of the side walls of the channel regions, and second gaps are provided between the insulating layer and the second dielectric layer; and formation of number lines so that number lines fill the second gaps.

EFFECT: present invention discloses a semiconductor structure and a method of making said structure.

11 cl, 31 dwg