METHOD OF MANUFACTURE OF SENSITIVE ELEMENT OF MICROSYSTEMS OF CONTROL OF PARAMETERS OF MOVEMENT Russian patent published in 2018 - IPC H01L21/02 

FIELD: physics.

SUBSTANCE: on original structure of silicon-on-insulator (SOI) structuring a silicon layer located on the dielectric layer with an ion beam focused (FIP) to obtain a flat meandering spring with the given length and width of the body with the tips at the ends, when structuring the silicon layer, the geometric configuration of the spring is provided, resulting in an increase in the electrical length from 9 to 11 times in comparison with the shape of the beam in the form of a solid rectangle of the same specified length and width, a decrease in the influence of the vertical natural frequency of oscillations, the appearance of a longitudinal horizontal natural frequency of oscillations and the appearance bending during rotary motion, after completion of the structuring of the silicon layer to obtain the structural elements of the active element - the body of a flat meandrode spring, the sites at the ends - from the body of a flat meander spring completely remove the material of the dielectric layer, obtaining the structure of SOI bridged shape, preparing a carrier substrate with a dielectric working surface on which a pair of contact pads and a control electrode located between them are first made of an electrically conductive material, then the contacting pads connecting the active element are deposited by means of a FIP, the active element with a flat meandrode spring and pads at the ends is extracted from STR structures of bridged form are transferred to a carrier substrate and transfer to a carrier substrate and rigidly fasten the areas at the ends to the active site-connecting pads.

EFFECT: providing the possibility of increasing the accuracy and sensitivity when detecting changes in motion parameters.

11 cl, 5 dwg