FIELD: process engineering.
SUBSTANCE: invention relates to making of sealed structures that make micro electromechanical systems. Making a seal inside first composite plate of silicon-insulator-type used for production of sealed structure comprises the steps that follow. First silicon plate is structured to make one or more recesses extending through at least the part of first silicon plate depth. Sole or every recess id filled with insulator suitable to adhesion to silicon by anode junction. This allows making of the first composite plate with multiple interfaces silicon-insulator and first contact surface consisting of insulator. Anode junction process is applied to first and second contact surfaces to produce tight seal in silicon-insulator interfaces of the first composite plate. Note here that second contact surface consists of silicon.
EFFECT: simplified making of tight seal.
20 cl, 11 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF ELECTRICALLY INSULATED SILICON REGIONS FORMATION IN BULK OF SILICON WAFER | 2009 |
|
RU2403647C1 |
| MICROELECTROMECHANICAL SYSTEM FOR ANGULAR VELOCITY SENSOR | 2011 |
|
RU2580879C2 |
| METHOD OF FORMING A PRINTING HEAD FOR THERMOGRAPHIC INK-JET PRINTING, A PRINTING HEAD FOR THERMOGRAPHIC INK-JET PRINTING AND A SEMICONDUCTOR PLATE | 2016 |
|
RU2714619C1 |
| METHOD OF MANUFACTURE OF SENSITIVE ELEMENT OF MICROSYSTEMS OF CONTROL OF PARAMETERS OF MOVEMENT | 2016 |
|
RU2644029C2 |
| MEMS DEVICES SEALING METHOD | 2017 |
|
RU2662061C1 |
| ELEMENT AND METHOD OF ITS PRODUCTION | 2008 |
|
RU2424972C1 |
| METHOD FOR MANUFACTURING SILICON-ON-INSULATOR STRUCTURE | 1999 |
|
RU2173914C1 |
| SUPERCAPACITOR BASED ON CMOS TECHNOLOGY | 2016 |
|
RU2629364C1 |
| STRAIN GAUGE OF ABSOLUTE PRESSURE BASED ON SOI MICRO-ELECTROMECHANICAL SYSTEM | 2015 |
|
RU2609223C1 |
| METHOD OF PRODUCING "SILICON ON INSULATOR" SUBSTRATE AND "SILICON ON INSULATOR" SUBSTRATE | 2014 |
|
RU2639612C1 |
