FIELD: laser physics; optoelectronics.
SUBSTANCE: invention relates to laser physics and optoelectronics and is used to form a solar battery cell from monocrystalline silicon super-doped with impurities. Disclosed is a method of forming a solar battery cell, including obtaining a p-type monocrystalline silicon plate, texturing of both its surfaces and formation of current-conducting contacts on them, characterized in that texturing is carried out by chemical etching in 2% potassium hydroxide solution at temperature of 80 °C for 25 minutes, and then on the back surface of said plate in an inert atmosphere, aluminium is deposited to form a layer with thickness of 5 nm, after which it is exposed to a beam of laser radiation with a pulse duration of 120 ns and a power density of 8 J/cm2, and the front surface of said plate is annealed as a result of exposure to a beam of laser radiation with pulse duration of 120 ns and power density of 2.2 J/cm2 in an inert atmosphere to form an n-type region.
EFFECT: providing high absorption capacity in the range of the entire solar spectrum (250–2,500 nm).
1 cl, 2 dwg
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Authors
Dates
2024-03-19—Published
2023-11-13—Filed