METHOD OF MAKING INDIUM COLUMNS Russian patent published in 2012 - IPC H01L21/441 

FIELD: chemistry.

SUBSTANCE: method enables to form indium columns on both a silicon (Si) large-scale IC and an infrared photodiode array whose chip is made from a narrow-band-gap semiconductor, e.g., indium-antimony (InSb). In the method of making indium columns, a first and a second thick layer of positive photoresist with thickness of 5-7 mcm is deposited on the surface of a plate with metal contacts, a first thin layer of positive photoresist with thickness of 1-2 mcm is deposited, photolithography is carries out to form alignment marks, a metallic layer is deposited, a second thin layer of photoresist is deposited, photolithography is carried under the In column on the metallic layer, the metallic layer is etched in an acid etchant and plasma-chemical etching of the thin layer of photoresist and thick layers of photoresist to the surface of the metal contacts is carried out, an indium film is sprayed to form metal contacts of indium columns and layers deposited earlier are removed.

EFFECT: method simplifies the technique and increases size uniformity of indium columns.

10 dwg