MULTI-LAYER LOGIC MATRIX BASED ON A MEMRISTOR SWITCHING CELL Russian patent published in 2019 - IPC H03K19/948 

FIELD: computer engineering.

SUBSTANCE: creation of an extremely large logical matrix with nonvolatile memory and a high degree of integration of elements. Essence of the invention consists in that a multilayer logic matrix based on a memristor switching cell, which is an electronic integral device based on NOR gate logic elements, in which the architecture of electrical circuits is three-dimensional, and the device itself is formed perpendicularly oriented strata, commuted through memorial crossbars, and consists of cells with successively formed layers: monocrystalline silicon with through conductors using the technology of monolithic 3D integration; layer of planar CMOSs (complementary metal-oxide-semiconductor) inverters, each of which is formed by two complementary field effect transistors with integrated gateways – the input of the inverter, combined drains – output of the inverter and connected to the corresponding power rails sources; layer of signal conductors; memristor layer; layer with Zener diodes, and the memristors connected in series with Zener diodes are in the crosses of CMOS inverters and signal conductors of the underlying formation.

EFFECT: ensuring possibility of high integration of elements, low power consumption, high speed of the device.

1 cl, 6 dwg