METHOD FOR FORMING MEMRISTIVE STRUCTURES BASED ON COMPOSITE OXIDES WITH NANOPARTICLE AGGLOMERATE Russian patent published in 2022 - IPC H01L27/108 B82B3/00 B82Y40/00 

FIELD: electrical engineering.

SUBSTANCE: method for forming memristive structures based on composite oxides with nanoparticle agglomerates relates to methods for forming a vertical profile and organising memristive elements and operating modes thereof for the purpose of ensuring the highest productivity, stability, and repeatability of digital data processing parameters. The method consists in forming two electrodes based on one or multiple nanoscale metal oxide layers, separating the electrodes by an active medium so that an insulating layer is applied between the electrodes along the periphery of the area of the active medium. A conductive layer is formed on top of the insulating layer, wherein a connection thereof with a negative bus is ensured, preventing the leakage of negative oxygen ions through the insulating layer if a leakage crack or channel suddenly occurs therein. The difference from known technical solutions consists in the fact that an insulating layer is applied between the electrodes along the periphery of the area of the active medium, on top whereof a conductive layer is formed, electrically connected with a negative bus, and since the current carriers in the active medium are negative oxygen ions, an external electric field preventing the passage (leakage) of negative oxygen ions through the insulating layer is created when a small negative potential is applied to the conductive layer. A technical solution is obtained as a result, ensuring formation of memristor structures with high efficiency of impact on negative oxygen ions constituting charge carriers in said structure.

EFFECT: increase in the stability and repeatability of the characteristics (switching voltage, resistance in low-resistance and high-resistance states) of memristors, the resistance whereof changes when an electric current is passed through them.

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