METHOD OF PRODUCING FILMS OF CADMIUM TELLURIDE BY MAGNETRON SPUTTERING AT A CONSTANT CURRENT Russian patent published in 2018 - IPC C23C14/35 H01J37/34 

FIELD: technological processes.

SUBSTANCE: invention relates to a process for the production of thin films of cadmium telluride. Method comprises preheating the surface of the sputtered target from cadmium telluride to a predetermined temperature and magnetron sputtering on a direct current. Surface of the target is preheated to temperature of 156–166 °C by means of a heater that is placed above the target surface at a distance of 70 mm. This temperature is maintained during the sputtering of the target. First, the heater is placed outside the target surface area and upon reaching the temperature of heater 200 °C and a discharge current of 4 mA it is moved and placed above the surface of the target. Preliminary heating of the target leads to an intensification of thermionic emission. When preheated to a temperature of 166 °C of the target surface of cadmium telluride located on the surface of the magnetron, which design provides for its water cooling, with subsequent maintenance of it in the range from 156 °C to 166 °C. Heating of the target is carried out by turning the heater on and off. In magnetron sputtering, a voltage of 600 V is applied to the magnetron at an argon pressure of 2 Pa and a discharge current of 4 mA.

EFFECT: as a result, a high-quality films with a high growth rate are obtained.

1 cl, 2 dwg, 1 ex