METHOD FOR PRODUCING HETEROSTRUCTURE Mg(FeGa)O/SI WITH STABLE INTERPHASE BOUNDARY Russian patent published in 2018 - IPC C23C14/16 C23C14/22 H01J37/34 H01J37/317 

FIELD: technological processes.

SUBSTANCE: invention relates to a method for producing a heterostructure Mg(Fe_1-xGa_x)₂O₄/Si with a stable interfacial film/substrate boundary, where x=0.05÷0.25. Film of gallium-substituted magnesium ferrite is deposited on a semiconductor substrate of single-crystal silicon Mg(Fe_1-xGa_x)₂O₄, where x=0.05÷0.25. Film is applied in 5 stages. At 1 stage, a layer of gallium-substituted magnesium ferrite with a thickness of 10 to 20 nm is applied to the Si substrate by the ion-beam method, spraying a powdery target of gallium-substituted magnesium ferrite with a beam of oxygen ions with an energy of 1,500 to 1,600 eV and a beam current density of 0.1 to 0.25 mA/cm². In step 2, the resulting layer is crystallized by heating at a rate of 150 °C/min up to a temperature of 700–720 °C and keeping for 2–3 minutes, followed by cooling. At 3 stage, the crystal film with a beam of oxygen ions with an energy of 300–400 eV and a beam current density of 0.1 to 0.25 mA/cm² is refined to a thickness of 2–4 nm. At step 4 ferrite layer of the same composition of the first stage is re-applied by ion beam method to refined crystalline layer of gallium-substituted ferrite magnesium, up to a film thickness not exceeding 80 nm by spraying a powdery target of gallium-substituted magnesium ferrite with an ion energy ion beam from 1,500 to 1,600 eV and a beam current density of 0.1 to 0.25 mA/cm². In step 5, the gallium-substituted magnesium ferrite film is recrystallized on the substrate.

EFFECT: invention makes it possible to create a heterostructure with stable interfacial film/substrate boundaries for spintronics devices.

1 cl, 3 dwg, 3 ex