METHOD FOR PRODUCING FERRITE FILMS Russian patent published in 2023 - IPC C23C14/28 C23C14/46 C23C14/08 C23C14/02 C23C14/54 C23C14/58 C01F11/02 C01G49/02 H01F1/10 H01F10/20 H01F10/28 

FIELD: synthesis technology.

SUBSTANCE: invention relates to a technology for the synthesis of anisotropic (with an easy magnetization axis directed perpendicular to the film plane) BaFe₁₂O₁₉ films by vapor phase deposition. Such a material can be used in the development of planar nonreciprocal microwave devices with a self-bias effect, in spintronic devices as a magnetic dielectric. The method for obtaining ferrite films includes the production of a target, treatment of a single-crystal substrate with argon ions, sputtering of the target onto a heated substrate, supply of a controlled flow of oxygen ions to the substrate area, further crystallization annealing of the film, while a target of the same composition, a single-crystal substrate, is used to obtain a film of barium hexaferrite BaFe₁₂O₁₉ Al₂O₃ crystallographic orientation (001), the substrate is heated to a temperature of 300-350°C during the deposition process, after deposition of a 70-90 nm film on the substrate, the deposition process is interrupted, after which the film is held for 5 minutes at the substrate temperature, then the deposition is repeated many times layers of 70-90 nm and exposure at a temperature of 300-350°C for 5 min until the required film thickness, and crystallization annealing is carried out in air at a temperature of 800-900°C for 1-3 hours.

EFFECT: obtaining high-quality thick (up to ~1 μm and more) anisotropic films of hexagonal ferrites BaFe₁₂O₁₉ with the direction of the magnetic moment perpendicular to the plane of the film.

1 cl, 3 dwg, 1 ex