SEMICONDUCTOR IONIZING-RADIATION COORDINATE DETECTOR Russian patent published in 2007 - IPC H01L31/10 G01T1/24 

FIELD: semiconductor devices.

SUBSTANCE: proposed semiconductor ionizing-radiation coordinate detector has n⁺ substrate, n^- or p^- active layer epitaxially grown thereon with p⁺ flat signal electrodes formed on its surface and provided with ohmic contacts separated by grooves. The latter are etched through depth of 20 to 50% of active layer thickness and p⁺ layers of thickness constituting maximum 3% of active-layer thickness are formed on groove bottoms.

EFFECT: enlarged effective area of separate detector channels, reduced channel-to-channel current leakage, minimized spatial pitch of detector.

1 cl, 1 dwg, 1 ex