FIELD: microelectronics.
SUBSTANCE: invention relates to the field of microelectronics and can be used in creating radiation-resistant integrated circuits with controlled stabilisation voltage. The stated technical result is achieved by forming a vertical p-n junction between the high-alloyed regions of the anode and cathode in the Zener diode on a silicon-on-insulator structure, including an anode, cathode, and contacts, wherein a contact connected with the lower layer of the p-n junction by a low-alloyed region of silicon is made to said junction.
EFFECT: possibility of controlling the stabilisation voltage, increasing the radiation resistance, and expanding the scope of application of the Zener diode.
1 cl, 7 dwg
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