METHOD OF MAKING HETEROSTRUCTURE FOR GALLIUM ARSENIDE BASED PHOTOCONVERTER ON GERMANIUM SUBSTRATE Russian patent published in 2011 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method of making a heterostructure for a gallium arsenide based photoconverter on a germanium substrate via gaseous-phase epitaxy from organometallic compounds involves annealing the germanium substrate in a hydrogen current, stabilisation of the germanium surface with conversion of monoatomic steps to diatomic steps, growing a first GaAs layer on the germanium and a second GaAs layer on top of the first. The germanium substrate is annealed in a hydrogen current at pressure 80-150 millibars for 10-15 minutes at substrate temperature 640-660°C. The next annealing of the germanium substrate is carried out in a hydrogen current and arsine partial pressure in the reactor equal to 0.13-0.16 millibars for 4-7 minutes at temperature 640-660°C. The first GaAs layer is grown from arsine and triethylgallium on the germanium substrate at reactor temperature 530-560°C for 8-12 minutes with partial pressure ratio of arsine to triethylgallium equal to 4-7. The second GaAs layer is grown from arsine and triethylgallium on top of the first GaAs layer at reactor temperature 530-560°C for 60-80 minutes with partial pressure ratio of arsine to triethylgallium equal to 50-70.

EFFECT: improved photoconverter parameters owing to formation of a GaAs based heterostructure on a germanium substrate with minimum number of defects through optimisation of substrate annealing parameters, optimisation of parameters for growing the first and second GaAs layers.

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