FIELD: technological processes.
SUBSTANCE: invention relates to an apparatus for heat-treating a substrate, the apparatus having a heating unit and a carrier provided with a support surface for supporting the substrate. Apparatus for heat-treating the substrate has a heating unit and a carrier provided with a support surface for the substrate. At least a portion of the support is made of a composite material comprising an amorphous matrix component and an additional component in the form of a semiconductor material. In this case, the conductive path, which is part of the heating unit and which is made of an electrically conductive resistive material, which generates heat when the current passes through it, is applied to the surface of the composite material.
EFFECT: creating an apparatus, a carrier, and an element for supporting the carrier substrate, which allow simple thermal treatment of substrates with high throughput.
10 cl, 6 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD OF PRODUCING COMPOSITE SUBSTRATE SIC AND METHOD OF MAKING A SEMICONDUCTOR SUBSTRATE | 2016 |
|
RU2720397C2 |
METHOD FOR SUBSTRATE PROCESSING AND SUBSTRATE | 2011 |
|
RU2576547C2 |
DEVICE FOR IRRADIATING SUBSTRATE MATERIAL IN FORM OF SHEET OR WEB AND USE THEREOF | 2011 |
|
RU2601267C2 |
CIRCUIT SUBSTRATE | 2007 |
|
RU2454841C2 |
METHOD FOR PRODUCING CURRENT-CONDUCTING FILM ON SILICA-CONTAINING SUBSTRATE | 1997 |
|
RU2169406C2 |
METHOD OF MAKING COMPOSITE SUBSTRATE FROM SIC | 2016 |
|
RU2721306C2 |
METHOD FOR CLEANING OF SUBSTRATE | 2005 |
|
RU2364574C2 |
METHOD OF MAKING COMPOSITE SUBSTRATE FROM SIC | 2016 |
|
RU2728484C2 |
HEATING APPARATUS, APPLICATION THEREOF, OHMICALLY RESISTIVE COATING, METHOD FOR COATING BY THE COLD SPRAYING METHOD AND PARTICLE MIXTURE APPLIED THEREIN | 2019 |
|
RU2774672C1 |
CVD-REACTOR AND METHOD OF SYNTHESIS OF HETERO-EPITAXIAL FILMS OF SILICON CARBIDE ON SILICON | 2008 |
|
RU2394117C2 |
Authors
Dates
2018-08-21—Published
2017-05-19—Filed