FIELD: chemistry.
SUBSTANCE: application: to form stable and crystalline oxide layer on substrate. Essence of the invention consists in the following: surface of substrate of In-containing III-As, III-Sb or III-P is cleaned from amorphous natural oxides, cleaned substrate from In-containing III-As is heated to temperature approximately 340-400°C, cleaned substrate from In-containing III-Sb is heated to temperature approximately 340-450°C, or cleaned substrate from In-containing III-P is heated to temperature approximately 450-500°C and substrate is oxidised by introduction of gaseous oxygen to substrate surface.
EFFECT: provision of possibility to form crystalline oxide layer, possessing long-range order, by simpler way.
22 cl, 6 dwg
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