FIELD: physics.
SUBSTANCE: invention relates to transistor devices. Transistor device comprises: source and drain conductors connected by semiconductor channel, and gate conductor connected by capacitive coupling with semiconductor channel through dielectric gate layer. Gate conductor comprises at least one portion overlapping at least a portion of at least one of said source and drain conductors, and the device further comprises a structured insulator inserted between at least a portion of one of the source and drain conductors and at least one overlapping section of the gate conductor so as to provide attenuation of capacitive coupling at least between one of the source and drain conductors and the gate conductor is stronger than any attenuation of the capacitive coupling between the semiconductor channel and the gate conductor.
EFFECT: technical result consists in attenuation of capacitive coupling between gate conductor and source and/or drain conductors.
13 cl, 4 dwg
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