PLANARISATION LAYER Russian patent published in 2019 - IPC H01L27/88 H01L21/8232 

Abstract RU 2679270 C2

FIELD: electricity; optical system.

SUBSTANCE: disclosed is an electrical and/or optical device comprising an unplanarised plastic substrate, an electrically and/or optically functional layer formed on said substrate, a planarisation layer formed over the functional layer, at least a first conductor layer and a semiconductor layer formed over the planarisation layer.

EFFECT: first conductor layer forms at least source and drain electrode circuitry for one or more transistor devices, and the semiconductor layer forms semiconductor channels for said one or more transistor devices, wherein the electrically and / or optically functional layer comprises a second conductor layer, forming the gate electrodes for each of the transistor devices.

22 cl, 2 dwg

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RU 2 679 270 C2

Authors

Kharding Dzhejms

Benech Majk

Dates

2019-02-06Published

2014-08-21Filed