FIELD: physics.
SUBSTANCE: method comprises applying a sacrificial layer on a substrate, sequential application of two or more layers of material of the beam differing magnitude of internal mechanical stresses, the formation of the beam on the surface of the sacrificial layer by photolithography and etching of the beam material, removing the sacrificial layer from beneath the beam, causing the material layers beams operate by magnetron sputtering, and different internal stresses in the layers due provide different voltage values of constant substrate bias for which the layers are applied. The specified bending of the beam is achieved by selecting the thicknesses of the layers of the beam material, the values of the bias voltage and the number of layers.
EFFECT: expansion of the production possibilities for beams with a given bend.
3 cl, 7 dwg
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