THREE-DIMENSIONAL STRUCTURE FORMED BY THIN SILICON WIRES, METHOD OF PRODUCTION OF THE STRUCTURE AND DEVICE ON BASE OF IT Russian patent published in 2008 - IPC G01N13/10 

Abstract RU 2320976 C2

FIELD: measuring technique.

SUBSTANCE: three-dimensional structure and method of its production can be applied to scanning probe microscope, oscillations measuring devices, surface and border surface analyzer of electric circuit, mass detector, electric circuit network, filter for gripping material an so on and it can be used for measurement of temperature, determination of temperature distribution in electron devices and temperature distribution and metabolism in biological matters. Three-dimensional structure is formed by high-reliable super-thin silicon wires having size of 1 nanometer to several micrometers, formed by wet etching by usage of crystal structure of single-crystal material. Two wires form one thin coil.

EFFECT: improved reliability of measurements.

29 cl, 31 dwg

Similar patents RU2320976C2

Title Year Author Number
METHOD OF PRODUCING ELEMENTS WITH NANOSTRUCTURES FOR LOCAL PROBE SYSTEMS 2015
  • Presnov Denis Evgenevich
  • Bozhev Ivan Vyacheslavovich
  • Krupenin Vladimir Aleksandrovich
  • Snigirev Oleg Vasilevich
RU2619811C1
CANTILEVER WITH WHISKER PROBE AND METHOD FOR MANUFACTURING SAME 1999
  • Givargizov Evgenij Invievich
  • Obolenskaja Lidija Nikolaevna
  • Stepanova Alla Nikolaevna
  • Mashkova Evgenija Sergeevna
  • Givargizov Mikhail Evgen'Evich
RU2275591C2
METHOD FOR MANUFACTURING SILICON-ON-INSULATOR STRUCTURE 1999
  • Rusak T.F.
  • Enisherlova-Vel'Jasheva K.L.
  • Kontsevoj Ju.A.
RU2173914C1
METHOD FOR PRODUCING SILICON NANOSTRUCTURE, LATTICE OF SILICON QUANTUM CONDUCTING TUNNELS, AND DEVICES BUILT AROUND THEM 1999
  • Smirnov V.K.
  • Kibalov D.S.
RU2173003C2
METHOD OF MANUFACTURE OF SILICON-ON-INSULATOR STRUCTURE 1995
  • Khaustov Vladimir Anatol'Evich
RU2096865C1
MATRIX OF SILICON-INSULATOR METAL-INSULATOR-SEMICONDUCTOR TRANSISTOR 1991
  • Druzhinin A.A.
  • Ken'O G.V.
  • Kogut I.T.
  • Kostur V.G.
  • Javorskij P.V.
RU2012948C1
HETEROEPITAXIAL STRUCTURE WITH A DIAMOND HEAT SINK FOR SEMICONDUCTOR DEVICES AND METHOD FOR ITS MANUFACTURE 2020
  • Zanaveskin Maksim Leonidovich
  • Andreev Aleksandr Aleksandrovich
  • Mamichev Dmitrii Aleksandrovich
  • Chernykh Igor Anatolevich
  • Maiboroda Ivan Olegovich
  • Altakhov Aleksandr Sergeevich
  • Sedov Vadim Stanislavovich
  • Konov Vitalii Ivanovich
RU2802796C1
PROCESS OF MANUFACTURE OF SILICON-ON-INSULATOR STRUCTURE 1995
  • Khaustov Vladimir Anatol'Evich
RU2090952C1
METHOD FOR MANUFACTURING A MOS TRANSISTOR ON A SILICON-ON-INSULATOR STRUCTURE 2022
  • Shobolova Tamara Aleksandrovna
  • Shobolov Evgenij Lvovich
  • Surodin Sergej Ivanovich
  • Gerasimov Vladimir Aleksandrovich
  • Boryakov Aleksej Vladimirovich
  • Trushin Sergej Aleksandrovich
RU2784405C1
CANTILEVER WITH SINGLE-ELECTRODE TRANSISTOR FOR PROBING MICROSCOPY 2012
  • Krupenin Vladimir Aleksandrovich
  • Presnov Denis Evgen'Evich
  • Amitonov Sergej Vladimirovich
  • Snigirev Oleg Vasil'Evich
  • Trifonov Artem Sergeevich
RU2505823C1

RU 2 320 976 C2

Authors

Kavakatsu Khideki

Kobajasi Daj

Dates

2008-03-27Published

2003-06-02Filed