METHOD FOR FORMING LOCAL BURIED DIELECTRIC INSULATION REGION OF ACTIVE PART OF TRANSISTORS WITH THREE-DIMENSIONAL STRUCTURE OF SHELL (FINFET) Russian patent published in 2018 - IPC H01L21/76 

FIELD: electricity.

SUBSTANCE: invention relates to the field of solid state electronics, in particular methods for forming the isolation of the active part of field effect transistors with a three-dimensional shutter structure (FinFET). Essence of the invention is a method for forming a buried dielectric insulation region of the active part of a FinFET from a substrate, that the isolation region is localized in a limited volume of the body of the transistor, allowing the structure to have high mechanical strength.

EFFECT: invention provides a suppression of the leakage current of the leakage of the drain and source space charge regions.

1 cl, 6 dwg