DESIGN OF DISCRETE MICROWAVE LDMOS-TRANSISTOR CRYSTAL WITH IMPROVED SOURCE SHIELDING BUS Russian patent published in 2024 - IPC H01L29/772 H01L29/78 

FIELD: microelectronic equipment.

SUBSTANCE: invention represents a discrete microwave LDMOS-transistor crystal design, in which gate branches are formed in a layer of material used to create a field electrode, and are overlapped by source shielding buses at the level of the second metal layer, connected through interlayer transition contact windows with source metallization at the level of the first metal, forming a cell structure around the gate branches. Besides, interlayer transition contact windows connecting elements of shielding buses located in different metal layers are arranged in staggered order.

EFFECT: invention enables to reduce throughput capacitance and output capacitance of the microwave LDMOS transistor, which enables to achieve high power amplification factor and drain efficiency of the microwave transistor.

1 cl, 8 dwg