PHOTOELECTRIC TRANSFORMER WITH ANTIREFLECTION NANO-COATING Russian patent published in 2018 - IPC H01L31/04 B82B1/00 

FIELD: instrument engineering.

SUBSTANCE: invention relates to the technology of manufacturing optoelectronic devices, namely to the construction of photoelectric converters. Photoelectric converter with antireflection nanocoating includes a semiconductor structure AlGaInP/GaInP/Ga(In)As/Ge with a front layer of AlGaInP, a face-to-face ohmic contact, a rear ohmic contact and an antireflection coating. Between the front layer and the antireflective coating, a tunnel barrier is formed, which is a layer of Ta₂O₅ thickness 1÷2 nm. Antireflection coating is made of a two-layer coating and contains a successively applied conductive layer of zinc oxide doped with ZnO:Al with a thickness of 50÷60 nm, on which a face-to-face ohmic contact is directly applied, and a layer of silicon oxide SiO₂ thickness 70÷90 nm.

EFFECT: technical result of the invention consists in reducing the surface resistivity and decreasing the area of the metal contact grid (an increase in the unshielded FEP area by at least 3 %), which leads to an increase in the efficiency of conversion of solar energy into electrical energy by at least one absolute percent.

1 cl, 1 dwg