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2 436 191

(13)

(51)

IPC

H01L31/04(2006-01-01)

B82B1/00(2006-01-01)

(21) (22)

Application

2010126395/28, 2010-06-28

(24)

Start date

2010-06-28

(22)

Actual filing date

2010-06-28

(45)

Published

2011-12-10

(72)

Inventor

Andreev Vjacheslav MikhajlovichMalevskaja Aleksandra VjacheslavovnaGudovskikh Aleksandr SergeevichZadiranov Jurij Mikhajlovich

(73)

Holder

Rossijskaja Federatsija, Ot Imeni Kotoroj Vystupaet Ministerstvo Promyshlennosti I Torgovli Rossijskoj Federatsii

MULTISTAGE PHOTOELECTRIC CONVERTER WITH NANOSTRUCTURE ANTIREFLECTION COATING Russian patent published in 2011 - IPC H01L31/04 B82B1/00

Abstract RU 2436191 C1

FIELD: physics.

SUBSTANCE: multistage photoelectric converter with a nanostructure antireflection coating is based on a multilayer AIGaInP/GaInP/Ga(In)As/Ge semiconductor structure. The photoelectric converter has rear and front ohmic contacts and a multilayer nanostructure antireflection coating formed on the front surface of the structure in places free of ohmic contacts, consisting of three layers: SiO₂ with thickness of 70-80 nm, Si₃N₄ with thickness of 25-35 nm and TiO_X, where x=1.8-2.2, with thickness of 20-30 nm.

EFFECT: multistage photoelectric converter has high efficiency and low coefficient of reflection in the shortwave and longwave region of the solar spectrum.

5 ex, 1 dwg

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RU 2 436 191 C1

Authors

Andreev Vjacheslav Mikhajlovich

Malevskaja Aleksandra Vjacheslavovna

Gudovskikh Aleksandr Sergeevich

Zadiranov Jurij Mikhajlovich

Dates

2011-12-10—Published

2010-06-28—Filed