FIELD: power engineering.
SUBSTANCE: invention relates to solar energy, namely to methods of making photoconverters on GaInP/Ga(In)As/Ge three-stage epitaxial structures grown on a germanium substrate. Method for manufacturing a photoconverter with a nanostructured antireflection coating includes the creation on a germanium substrate with a three-cascade structure of epitaxial layers of face and rear contacts based on silver; performance of mesa-isolation; annealing of contacts; opening of the optical window by etching; applying an antireflection coating containing TiO2 and Al2O3 layers, by electron beam deposition; disk cutting performance of epitaxial structure; rectification of the photo-converter by cooling in nitrogen vapors; after contact annealing, rectification by cooling in the nitrogen vapor of the metallized substrate; performance of disk cutting of epitaxial structure; further, the optical window is opened by etching; antireflection coating is applied by successive spraying of layers TiO2 thickness 5÷35 nm without ion-plasma assisting, TiO2 thickness 10÷40 nm with ion-plasma assist, Al2O3 thickness 70÷80 nm without ion-plasma assist, and then perform the chemical-dynamic etching of the antireflection coating in a solution of tetramethylammonium hydroxide, hydrogen peroxide and water at the following quantitative ratio of components: 1÷1.5 % by weight, 10÷20 % by weight, 89÷78.5 % by weight, respectively.
EFFECT: invention provides an increase in the parameters of the photo-converter by improving the optical properties of the antireflection coating and minimizing the shunting effect of the plasma on the p/n junctions emerging on the mesic surface.
1 cl, 8 dwg
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Authors
Dates
2018-04-17—Published
2017-01-30—Filed