FIELD: manufacturing technology.
SUBSTANCE: method of obtaining a ferroelectric film Ba1-xSrxTiO3 refers to the technology of thin films and can be used in the production of ferroelectric films Ba1-xSrxTiO3 for microwave technology. At the first step the target Ba0.4Sr0.6TiO3 composition is sprayed onto a sapphire substrate with a sublayer of platinum in an oxygen atmosphere at a pressure of 2 Pa and a temperature substrate of a 700–900 °C during the time enough to create a continuous ferroelectric layer. At the second step, the spraying process stops for the time, enough for the annealing of a solid ferroelectric layer, other technological parameters do not change. Then the steps are repeated several times to obtain the required thickness of the ferroelectric film.
EFFECT: technical result is a high dielectric nonlinearity of the ferroelectric film at low dielectric losses, that makes it possible to use the ferroelectric films obtained in microwave technology.
1 cl, 2 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD OF PRODUCING FERROELECTRIC FILMS ΒaSrTiO | 2019 |
|
RU2700901C1 |
METHOD OF OBTAINING SEGNETIC ELECTRIC FILM BaSrTiO | 2016 |
|
RU2619365C1 |
SMALL-SIZED PHASE SHIFTER OF MICROWAVE RANGE | 2012 |
|
RU2510551C1 |
SOLID SOLUTIONS FERROELECTRIC FILMS PRODUCTION METHOD | 2018 |
|
RU2682118C1 |
FERROELECTRIC CAPACITOR MANUFACTURING METHOD | 2013 |
|
RU2530534C1 |
PROCESS OF FORMATION OF FILM ELEMENTS ON BASE OF PLATINUM | 1996 |
|
RU2110112C1 |
THIN-FILM FERROELECTRIC CAPACITOR | 2013 |
|
RU2550090C2 |
METHOD FOR PULSED-LASER PRODUCTION OF HIGH DIELECTRIC CONSTANT THIN-FILM MATERIALS | 2004 |
|
RU2306631C2 |
PRODUCTION METHOD OF HIGH-TEMPERATURE SUPERCONDUCTING FILM ON THE QUARTZ SUBSTRATE | 2015 |
|
RU2629136C2 |
METHOD FOR PRODUCTION OF GAS-SENSITIVE ELEMENT | 0 |
|
SU1761814A1 |
Authors
Dates
2018-11-02—Published
2017-06-19—Filed