METHOD OF PRODUCING FERROELECTRIC FILMS ΒaSrTiO Russian patent published in 2019 - IPC C23C14/16 C23C14/34 C23C14/58 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to a method of producing ferroelectric film Ba₁-_xSr_xTiO₃ and can be used for powerful super-high frequency equipment. At the first stage, target Ba_0.4Sr_0.6TiO₃ on a silicon carbide substrate in an oxygen atmosphere at pressure of 2 Pa and a substrate temperature of 700–900 °C for a time sufficient to form a solid ferroelectric layer. At the second stage, the spraying process is stopped and the substrate temperature is increased for a time sufficient for annealing of the solid ferroelectric layer. After the annealing process is completed, the temperature of the substrate is reduced to the temperature of the first step. Other process parameters are not changed. Then, steps are repeated several times to obtain required depth of ferroelectric film.

EFFECT: technical result consists in production of ferroelectric film with high dielectric nonlinearity at low dielectric losses on substrate with high heat conductivity for powerful super-high frequency equipment.

1 cl, 2 dwg, 1 ex