FIELD: chemistry.
SUBSTANCE: method of obtaining a segnetic electric film Ba1-xSrxTiO3 refers to the technology of obtaining thin films and can be used in the production of segnetic electric films Ba1-xSrxTiO3 for ultra-high frequency equipment. In the first phase on Sapphire substrate, solid ferroelectric layer is formed by spraying the target composition Ba1-xSrxTiO3 atmospheric oxygen at a pressure of 2 PA and the temperature of the substrate 850-900°C. At the second stage, the substrate temperature is reduced to 750-800°C, at which the main ferroelectric layer is formed.
EFFECT: high dielectric nonlinearity of oriented ferroelectric film at high Q, allowing to use ferroelectric films obtained in microwave technology.
3 dwg
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