FIELD: electronic industry, in particular, methods for cutting and scribing of transparent non-metal material, preferably, specifically solid materials with or without semiconductor coating. SUBSTANCE: method involves providing pulsed laser radiation with wavelength within material transparency band, pulse duration of 10-100 ns and pulse intensity sufficient for creating of breakdown in focus zone; determining size of defect in sample points spaced from one another by distance providing 50% overlapping of defects up to double space between defects; during cutting of transparent non-metal materials with semiconductor coating, additionally forming beam so that power density on surface does not exceed semiconductor coating breakdown threshold. EFFECT: increased efficiency by providing conditions for creating of material breakdown mechanism owing to impact and multiquantum ionization resulting in development of only small-sized defects. 4 cl, 4 dwg
