METHOD OF FORMING MOLYBDENUM CARBIDE FILMS ON MOLYBDENUM-SILICON HETEROSTRUCTURE BY PYROLYSIS OF POLYAMIDE FILM OBTAINED BY MOLECULAR LAYER DEPOSITION Russian patent published in 2025 - IPC H01L21/205 

FIELD: chemistry.

SUBSTANCE: invention can be used for production of molybdenum carbide films on silicon substrate. Method of producing molybdenum carbide films includes a process of molecular layer deposition of an aromatic polyamide on a heterostructure and pyrolysis of a polyamide film in a vacuum or inert medium, wherein the heterostructure is Mo-Si_sub, and pyrolysis of polyamide film on Mo-Si_sub vacuum or inert medium is carried out at temperature 1200 °C, wherein carbon on surface of Mo-Si_sub appears due to carbonisation of polyamide, and prediction of thickness of films Mo_xC on silicon is carried out by controlling thickness of initial films of polymers during molecular-layer deposition of polyamide and heat treatment in vacuum or inert atmosphere.

EFFECT: possibility of monitoring the thickness and homogeneity of molybdenum carbide films on silicon at the nanometre level using controlled MLD of the initial polymers.

1 cl, 2 dwg