FIELD: chemistry.
SUBSTANCE: invention relates to the technology of producing nanometer-sized materials consisting of iron silicide nanocrystals α-FeSi2 with a controllably variable preferential crystallographic orientation, shape and habit, and can be used to develop new functional elements in spintronics and nanotechnology. Method for producing iron silicide nanocrystals α-FeSi2 with variable preferential orientation includes preliminary chemical preparation of the surface of the silicon substrate in aqueous solution of hydrofluoric acid and its purification by annealing at 840–900 °C, deposition of a gold layer on a silicon substrate by the orientation of Si (001) at room temperature by the method of thermal evaporation in ultrahigh vacuum, increase in substrate temperature to 840 °C and coprecipitation of iron and silicon with an atomic ratio of from 1:2 to 3:1.
EFFECT: technical result of the invention is the controlled production of nanocrystals α-FeSi2 on the surface of silicon with different predominant crystallographic orientational ratios, variable cut and nanocrystal shape α-FeSi2 for the same orientation ratio.
1 cl, 3 dwg, 1 tbl, 4 ex
Title | Year | Author | Number |
---|---|---|---|
METHOD OF PRODUCING SUPERPARAMAGNETIC NANOPARTICLES BASED ON IRON SILICIDE FeSi WITH MODIFIED SURFACE | 2019 |
|
RU2713598C1 |
METHOD OF OBTAINING HYBRID NANOCRYSTALS AUFE/FE AND INTERMETALLIC NANOCRYSTALS AUFE WITH CONTROLLED LATERAL SIZE | 2020 |
|
RU2747433C1 |
METHOD FOR FORMING MASSIVE OF FERROMAGNETIC NANOWIRES ON STEPPED SURFACE OF SEMICONDUCTOR SUBSTANCES WITH BUFFER COPPER LAYER | 2016 |
|
RU2624836C1 |
METHOD OF FORMING ORDERED STRUCTURES ON SURFACE OF SEMICONDUCTOR SUBSTRATES | 2015 |
|
RU2593633C1 |
GROWTH OF GaN NANOTUBES, ACTIVATED WITH Si DOPANT ON Si SUBSTRATES WITH THIN AIN BUFFER LAYER | 2016 |
|
RU2711824C1 |
METHOD FOR PRODUCING MONOLAYER SILICENE | 2021 |
|
RU2777453C1 |
METHOD OF GROWING EPITAXIAL FILMS OF DISILICIDE STRONGATION AT SILICON | 2016 |
|
RU2620197C1 |
METHOD FOR EUROPIUM DISILICIDE EPITAXIAL FILM GROWING ON SILICON | 2015 |
|
RU2615099C1 |
METHOD OF FORMING EPITAXIAL COPPER NANOSTRUCTURES ON SURFACE OF SEMICONDUCTOR SUBSTRATES | 2013 |
|
RU2522844C1 |
METHOD OF GROWING EPITAXIAL EUROPIUM MONOXIDE FILMS ON SILICON | 2014 |
|
RU2557394C1 |
Authors
Dates
2019-03-11—Published
2018-02-08—Filed