FIELD: chemistry.
SUBSTANCE: invention relates to a method for europium disilicide epitaxial film production on a silicon substrate, and can be used to create source/drain contacts in MOSFET technology with a Schottky barrier (SB-MOSFET), and to create spintronic devices as contact injector/detector of spin-polarized carriers. The method consists in atomic europium flow deposition under pressure PEu=(0.55÷)×10-8 Torr on a clean Si(001) substrate surface, heated to Ts=400±20°C, until a europium disilicide film of the desired thickness is formed. When the film thickness reaches 100 Å or more, further deposition is performed at Ts=560±20°C to form a europium disilicide film of the desired thickness.
EFFECT: formation of epitaxial EuSi2 films by molecular-beam epitaxy, which allows to achieve the required quality of contacts in microelectronics.
4 dwg, 3 ex
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