FIELD: chemistry.
SUBSTANCE: method of growing an epitaxial europium monoxide EuO film on a silicon substrate includes forming, via molecular-beam epitaxy, a submonolayer of europium silicide at substrate temperature T=640-680°C and pressure of the stream of europium atoms of (1-7)∙10-8 Torr, after which europium monoxide is deposited first at substrate temperature of 340-380°C, oxygen stream pressure of (0.2-3)·10-8 Torr and pressure of the stream of europium atoms of (1-4)·10-8 Torr, and then at substrate temperature of 430-490°C, oxygen stream pressure of (0.2-3)·10-8 Torr and pressure of the stream of europium atoms of (1-7)·10-8 Torr.
EFFECT: forming epitaxial EuO films on silicon substrates without a buffer layer using molecular-beam epitaxy.
5 cl, 6 dwg, 18 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF CULTIVATION OF EPITAXIAL FILMS OF EUROPIUM MONOXIDE ON GRAPHENE (OPTIONS) | 2018 |
|
RU2680544C1 |
| METHOD FOR EUROPIUM DISILICIDE EPITAXIAL FILM GROWING ON SILICON | 2015 |
|
RU2615099C1 |
| METHOD OF FORMING A THIN FILM OF EUROPIUM MONOXIDE ON A SILICON SUBSTRATE TO OBTAIN AN EPITAXIAL HETEROSTRUCTURE EUO/SI | 2020 |
|
RU2739459C1 |
| METHOD OF GROWING EPITAXIAL FILMS OF DISILICIDE STRONGATION AT SILICON | 2016 |
|
RU2620197C1 |
| METHOD FOR FORMING EPITAXIAL HETEROSTRUCTURES EuO/Ge | 2021 |
|
RU2768948C1 |
| METHOD FOR CREATING INTERFACE FOR INTEGRATION OF SINGLE-CRYSTAL EUROPIUM OXIDE WITH GERMANIUM | 2022 |
|
RU2793379C1 |
| METHOD OF PRODUCING AN EPITAXIAL FILM OF A MULTILAYER SILICEN INTERCALATED BY EUROPIUM | 2018 |
|
RU2663041C1 |
| METHOD OF PRODUCING PROTECTIVE DIELECTRIC LAYER | 2014 |
|
RU2574554C1 |
| METHOD OF CREATING A TWO-DIMENSIONAL FERROMAGNETIC MATERIAL OF GADOLINIUM DISILICIDE WITH A STRUCTURE OF INTERCALATED SILICENE LAYERS | 2018 |
|
RU2710570C1 |
| METHOD OF PRODUCING GERMANENE-BASED EUGE AND SRGE MATERIALS WITH HIGH MOBILITY OF CHARGE CARRIERS | 2020 |
|
RU2723125C1 |
