FIELD: analogue microelectronics.
SUBSTANCE: invention relates to analogue microelectronics and can be used as two-stroke buffer and output power amplifiers of various analogue devices (operational amplifiers, communication line drivers, etc.), allowing operation in conditions of penetrating radiation and low temperatures. To achieve the result, a circuit design is proposed, which is characterized by using a single current-stabilizing bipolar (resistor), which determines current static mode of operation.
EFFECT: design of a radiation-resistant and low-temperature circuit-based solution of BA on complementary field-effect transistors, which ensures high stability of the static mode of transistors and low noise level, even during operation in the low-temperature range, with high linearity of the amplitude characteristic.
3 cl, 9 dwg
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