BUFFER AMPLIFIER WITH LOW ZERO-OFFSET VOLTAGE ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION Russian patent published in 2020 - IPC H03F3/00 

Abstract RU 2712410 C1

FIELD: microelectronics.

SUBSTANCE: invention relates to analogue microelectronics. Buffer amplifier (BA) contains field transistors, a current-stabilizing resistor, additional resistors and a power supply source and reference current sources. Proposed BA allows parametric optimization of parameters by criterion of zero offset voltage minimization, which in real circuits is provided due to optimal selection of resistances of the first and second additional resistors, as well as currents of the first and second additional sources of reference current.

EFFECT: technical result consists in creation of radiation-resistant and low-temperature circuit solution buffer amplifier (BA) on complementary field transistors, providing low values of zero offset voltage.

1 cl, 10 dwg

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Authors

Prokopenko Nikolaj Nikolaevich

Budyakov Petr Sergeevich

Bugakova Anna Vitalevna

Dates

2020-01-28Published

2019-07-03Filed