BIPOLAR FIELD ARSENIDE GALLIUM BUFFER AMPLIFIER Russian patent published in 2023 - IPC H03F3/45 

Abstract RU 2796638 C1

FIELD: microelectronics.

SUBSTANCE: amplifier is proposed that comprises an input (1) and an output (2) of a device to which a load (3) is connected, an input field-effect transistor (4), the gate of which is connected to the input (1) of the device, the drain is matched with the first (5) power supply bus, and the source is connected to the output (2) of the device, a bipolar transistor (6), the emitter of which is connected to the source of the input field-effect transistor (4), and the collector is connected to the second (7) power supply bus, a current-stabilizing bipolar (8). The sink of the input field-effect transistor is connected to the input of an additional current mirror (9), matched with the second (5) power supply bus, the output of which is connected to the output of the device (2) through the potential matching circuit (10), and is also connected to the base of the bipolar transistor (6) and is connected to the second (7) busbar of the power source through a current-stabilizing bipolar (8).

EFFECT: providing a small static consumption current and providing currents in two directions in a relatively low-resistance load.

5 cl, 14 dwg

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RU 2 796 638 C1

Authors

Prokopenko Nikolai Nikolaevich

Zhuk Aleksei Andreevich

Sergeenko Marsel Alekseevich

Dates

2023-05-29Published

2023-02-22Filed