HIGH-SPEED PUSH-PULL BUFFER AMPLIFIER ON COMPLEMENTARY FIELD TRANSISTORS Russian patent published in 2022 - IPC H03F3/26 

Abstract RU 2784047 C1

FIELD: analog microelectronics.

SUBSTANCE: invention relates to the field of analog microelectronics. To achieve the effect, a high-speed push-pull buffer amplifier based on complementary field-effect transistors is proposed, which contains an input (1) and an output (2) of the device, the first (3) output field-effect transistor, the first (4) current output of the device, the first (5) power supply bus, the second (6) output field effect transistor, second (7) current output of the device, second (8) power supply bus, first (9) and second (10) non-linear two-poles. The gates of the first (3) and second (6) output field-effect transistors are connected to the input (1) of the device, the source of the first (3) output field-effect transistor is connected to the output (2) of the device through the first (9) nonlinear bipolar, and the source of the second (6) output field effect transistor is connected to the output (2) of the device through the second (10) non-linear two-terminal.

EFFECT: creation of an amplifier that provides low values of the systematic component of the zero bias voltage, low input currents, and high speed.

8 cl, 16 dwg

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RU 2 784 047 C1

Authors

Prokopenko Nikolai Nikolaevich

Budiakov Petr Sergeevich

Zhuk Aleksei Andreevich

Dates

2022-11-23Published

2022-08-13Filed