SEMICONDUCTOR DEVICE Russian patent published in 2012 - IPC H01L33/12 H01L33/26 

FIELD: physics.

SUBSTANCE: device includes electrodes, a monocrystalline silicon substrate with orientation of the working surface (111), on which there is a layered structure comprising a buffer layer of cubic silicon carbide and a layer of a hexagonal wide-band-gap semiconductor made from a group III metal nitride. According to the invention, the device further includes a layer of hexagonal silicon carbide lying on said layer of wide-band-gap semiconductor and epitaxially interfaced with it.

EFFECT: novel structure reduces the level of dislocations in the active region of the semiconductor device, enables to obtain a novel design of a device with two hard layers of silicon carbide and a soft layer of nitride, for example gallium nitride, in between.

4 cl, 6 dwg, 3 ex, 1 tbl